ZXCT1041
Issue 2 - January 2008
3
www.zetex.com
?Zetex Semiconductors plc 2008
Electrical characteristics
Test conditions T
A
 = 25癈, V
S+
 = 10V, V
SENSE
 = 100mV
NOTES:
(a) V
SENSE
 = "V
S+
" - "V
S-
"
(b)Temperature dependent measurements are extracted from characterisation and simulation results.
Symbol    Parameter
Conditions
Min.
Typ.
Max.    Units
I
Q
Ground pin current
15
35
50
I
S+
V
S+
 input current
V
SENSE
 = 0V
10
17
24
I
S-
V
S-
 input current
V
SENSE
 = 0V
10
17
24
V
OUT
Output voltage
[flag high]
V
SENSE
= +150mV
1.55
1.5
1.45    V
V
SENSE
= +100mV
1.02
1
0.98    V
V
SENSE
= +30mV
309
300
291    mV
V
SENSE
= 0V
0
15
mV
[flag low]
V
SENSE
 = -30mV
285
300
315    mV
V
SENSE
= -100mV
0.95
1
1.05    V
V
SENSE
= -150mV
1.42
1.50
1.58    V
V
OUT
 TC    V
OUT
 variation with
temperature
V
SENSE
= ?00mV
30
ppm/篊
Gain
V
OUT
/V
SENSE
10
Accuracy   Total output error
(Gain + offset)
V
SENSE
 = 100mV
?
%
Accuracy   Total output error
(Gain + offset)
V
SENSE
 = -100mV
?
%
BW
Bandwidth
V
SENSE(DC)
 = 100mV
V
SENSE(AC)
 = 63mV
PP
300
kHz
CMRR
V
S+
 common mode
rejection ratio
V
IN
 = 2.7 to 20V
60
dB
Flag TP
Flag trip point
Referred to V
SENSE
-2.5
+2.5    mV
V
FL
Flag low output
voltage
I
SINK
= 100A
60
200    mV
I
FH
Flag high leakage
current
V
OH
 = 5V
1
A
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